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ECG002
InGaP HBT Gain Block
Product Features
DC - 6 GHz 20 dB Gain @ 1 GHz +15.5 dBm P1dB @ 1 GHz +29 dBm OIP3 @ 1 GHz 3.8 dB Noise Figure Internally matched to 50 Robust 1000V ESD, Class 1C Lead-free/green/RoHS-compliant SOT-86, SOT-363, & SOT-89 package
Product Description
The ECG002 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MHz, the ECG002 typically provides 20 dB of gain, +29 dBm Output IP3, and +15.5 dBm P1dB.
Functional Diagram
GND 4
1
2 GND
3 RF OUT
The ECG002 consists of a Darlington-pair amplifier using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in low-cost, surface-mountable plastic lead-free/green/RoHS-compliant SOT-363, SOT-86 and SOT-89 packages. All devices are 100% RF and DC tested. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG002 will work for other various applications within the DC to 6 GHz frequency range such as CATV and mobile wireless.
RF IN
ECG002B-G
GND
4
RF In
1
RF Out
3
2
GND
Applications
Mobile Infrastructure CATV / FTTX WLAN / ISM RFID WiMAX / WiBro
ECG002C-G
GND 1 6 RF OUT
GND
2
5
GND
RF IN
3
4
GND
ECG002F-G
Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain Output P1dB Output IP3 (2) Test Frequency Gain Large-signal Gain (3) Output P1dB Output IP3 (2) Noise Figure Device Voltage Device Current
Typical Performance (1)
Units
MHz MHz dB dBm dBm MHz dB dB dBm dBm dB V mA
Min
DC
Typ
1000 20 +15.5 +29 2000 19 18 +15 +29 3.8 3.9 45
Max
6000
Parameter
Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure
Units
MHz dB dB dB dBm dBm dB 500 20.6 -17 -18 +15.8 +28 3.8
Typical
900 20 -17 -18 +15.5 +29 3.7 1900 19.5 -15 -21 +15 +29 3.8 2140 18.7 -15 -21 +14.9 +29 3.8
17 16 +13
3.5
4.3
1. Test conditions unless otherwise noted: 25 C, Supply Voltage = +5 V, Rbias = 24 , 50 System. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Large-signal gain is tested with an input power level of -3 dBm.
Ordering Information Absolute Maximum Rating
Parameter
Device Current RF Input Power (continuous) Thermal Resistance - ECG002B-G Thermal Resistance - ECG002C-G Thermal Resistance - ECG002F-G Junction Temperature
Part No.
ECG002B-G ECG002C-G ECG002F-G ECG002B-PCB ECG002C-PCB ECG002F-PCB
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 package)
Rating
150 mA +12 dBm 131 C/W 233 C/W 233 C/W +160 C
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-86 package)
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-363 package)
700 - 2400 MHz Fully Assembled Eval. Board 700 - 2400 MHz Fully Assembled Eval. Board 700 - 2400 MHz Fully Assembled Eval. Board
Thermal Resistance is for 106 hours MTTF Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 1000 pieces on a 7" reel for ECG002B-G. Standard T/R size = 1000 pieces on a 7" reel for ECG002C-G. Standard T/R size = 3000 pieces on a 7" reel for ECG002F-G. Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 1 of 7 August 2009
ECG002
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 24
Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 21 -18 -17 +15.4 +28 3.9 500 20.6 -17 -17 +15.6 +28 3.8 900 20 -17 -18 +15.5 +29 3.8 1900 19.5 -15 -20 +15 +29 3.8
, Icc = 45 mA
2140 18.7 -15 -21 +15 +29 3.8 2400 18.2 -15 -22 +15 +29 3.9 3500 16.4 -16 -35 +14.5 5800 13.3 -19 -16 +11
1. Test conditions: T = 25 C, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 24 , Icc = 45 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of -1 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency 22 20
S11, S22 (dB)
S11, S22 vs. Frequency 0 -5 -10 -15
Icc (mA)
Vde vs. Icc
120 100
Gain (dB)
S11
80 +25C 60 40 20 0 3.00
18 16 14 +25C 12 500 1000 -40C +85C 2500 3000
-20 -25 -30 -35 -40 0 1 2 3 4 Frequency (GHz) 5 6 S22
1500 2000 Frequency (MHz)
3.20
3.40
3.60
3.80
4.00
4.20
4.40
Vde (V)
OIP3 vs. Frequency
32
Noise Figure vs. Frequency 4.5 4 3.5 3 2.5
P1dB (dBm) NF (dB)
P1dB vs. Frequency 20 18 16 14 12 +25C -40C +85C 2500 3000 10 500
30
OIP3 (dBm)
28
26 +25C 24 500 1000 1500 -40C 2000 +85C 2500 3000
2 500
Frequency (MHz)
1000 1500 Frequency (MHz)
2000
1000
1500 2000 Frequency (MHz)
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 2 of 7 August 2009
ECG002
InGaP HBT Gain Block
Recommended Application Circuit
Vcc Icc = 45 mA
ECG002C-PCB
R4 Bias Resistor C4 Bypass Capacitor C3 0.018 F L1 RF Choke RF IN ECG002 C1 Blocking Capacitor C2 Blocking Capacitor RF OUT
ECG002B-PCB
ECG002F-PCB
Reference Designator L1 C1, C2, C4
50 820 nH .018 F
Recommended Component Values Frequency (MHz) 500 900 1900 2200 220 nH 68 nH 27 nH 22 nH 1000 pF 100 pF 68 pF 68 pF
2500 18 nH 56 pF
3500 15 nH 39 pF
1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig. L1 C1, C2 C3 C4 R4
Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 F chip capacitor Do Not Place 24 1% tolerance
Size 0603 0603 0603 0805
Recommended Bias Resistor Values Supply R1 value Size Voltage 5V 24.4 ohms 0805 6V 46.7 ohms 0805 8V 91 ohms 1210 9V 113 ohms 1210 10 V 136 ohms 2010 12 V 180 ohms 2010
The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +5 V. A 1% tolerance resistor is recommended.
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 3 of 7 August 2009
ECG002
InGaP HBT Gain Block
ECG002B-G Mechanical Information
This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an "E002G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
E002G XXXX-X
MSL / ESD Rating
Land Pattern
ESD Rating: Value: Test: Standard:
Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 4 of 7 August 2009
ECG002
InGaP HBT Gain Block
ECG002C-G Mechanical Information
This package is lead-free/Green/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with a twodigit numeric lot code (shown as "XX") followed with a "K" designator on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
MSL / ESD Rating
ESD Rating: Value: Test: Standard:
Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes Land Pattern
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 5 of 7 August 2009
ECG002
InGaP HBT Gain Block
ECG002F-G Mechanical Information
This package is lead-free/Green/RoHS-compliant. The plating material on the leads is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with a twodigit numeric lot code (shown as "XX") followed with a "5" designator on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
XX5
MSL / ESD Rating
ESD Rating: Value: Test: Standard:
Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Land Pattern
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 6 of 7 August 2009
ECG002
Freq (MHz)
InGaP HBT Gain Block
Typical Device S-Parameters - ECG002B-G
S-Parameters (Vdevice = +3.9 V, ICC = 45 mA, T = 25 C, calibrated to device leads)
S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000
-17.15 -16.04 -14.81 -13.59 -13.14 -13.40 -13.96 -15.15 -17.07 -19.43 -24.29 -26.31 -21.31
0.33 0.38 -8.39 -21.57 -38.98 -54.87 -68.82 -79.85 -85.86 -86.07 -76.56 -15.89 17.01
21.23 20.84 20.03 19.11 18.50 18.01 17.49 16.95 16.36 15.78 15.19 14.64 14.08
177.70 156.45 135.90 118.25 103.23 87.48 71.83 56.22 41.14 26.53 12.27 -1.79 -16.11
-23.14 -23.06 -22.83 -22.47 -21.81 -21.28 -20.73 -20.34 -19.95 -19.57 -19.34 -19.04 -18.87
-0.19 -1.64 -2.70 -4.36 -7.40 -11.83 -17.30 -22.68 -28.74 -34.89 -42.28 -49.74 -57.89
-15.62 -15.69 -15.79 -15.62 -15.49 -15.86 -16.64 -17.60 -17.11 -15.61 -13.30 -10.79 -8.79
-1.52 -20.22 -38.56 -58.17 -81.71 -107.96 -139.16 -171.00 151.84 119.05 94.72 76.65 61.13
Typical Device S-Parameters - ECG002C-G
S-Parameters (Vdevice = +3.9 V, ICC = 45 mA, T = 25 C, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000
-37.42 -22.95 -20.13 -19.79 -19.82 -16.54 -15.67 -15.94 -17.24 -19.29 -23.85 -28.00 -22.34
134.67 51.84 57.46 55.23 31.10 -1.82 -7.79 -8.76 -5.83 -2.21 -16.76 -81.95 -134.50
22.11 21.83 21.21 20.35 19.41 18.63 17.69 16.88 15.94 15.15 14.45 13.89 13.34
177.84 159.38 140.39 123.69 108.29 95.93 83.59 71.85 60.22 49.25 39.80 30.92 21.26
-23.75 -23.57 -23.62 -23.56 -23.07 -23.05 -22.20 -21.97 -21.37 -20.84 -20.62 -19.77 -19.58
0.04 1.76 1.39 2.36 2.45 1.89 3.83 1.75 -2.61 -5.08 -6.52 -7.93 -13.03
-36.75 -24.35 -22.33 -17.57 -15.79 -17.22 -15.86 -14.21 -12.04 -10.26 -9.57 -9.86 -10.90
-5.01 -54.15 -124.91 -159.03 -172.54 -173.92 168.33 145.59 128.60 120.09 116.71 118.09 119.18
Typical Device S-Parameters - ECG002F-G
S-Parameters (Vdevice = +3.9 V, ICC = 45 mA, T = 25 C, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000
-35.58 -25.34 -22.93 -21.74 -22.60 -19.67 -18.00 -17.76 -18.59 -20.60 -27.53 -37.18 -24.38
153.00 51.37 66.15 76.98 53.21 6.41 3.61 4.44 7.79 19.66 28.83 -144.72 -146.24
22.09 21.86 21.29 20.47 19.58 18.83 17.93 17.12 16.21 15.42 14.71 14.08 13.53
177.80 159.87 141.06 124.48 108.93 96.29 83.64 71.47 59.28 48.02 38.32 29.10 19.53
-23.58 -23.60 -23.30 -23.66 -23.31 -22.86 -22.60 -22.02 -21.64 -21.30 -20.52 -20.32 -19.40
1.09 0.02 2.10 2.66 1.22 -0.98 1.33 -1.64 -1.94 -4.58 -9.65 -9.39 -14.12
-41.45 -25.01 -22.43 -16.71 -14.43 -15.12 -13.82 -12.58 -10.90 -9.39 -8.57 -8.88 -9.58
-0.41 -55.13 -134.17 -168.31 179.01 176.50 164.54 145.98 130.27 117.60 112.39 113.57 114.73
Device S-parameters are available for download from the website at: www.TriQuint.com
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 7 of 7 August 2009

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